Description
MOCKWELL T4Z-D10N
T4Z-T10N T4Z-R2N T4Z-D10N T4Z-D60N
T4Z-D10N Built-in Amplifier Photoelectric Sensor
Product Description
Compact Photoelectric Sensor with Built-in Amplifier
Mechanical axis and optical axis offset of less than ±2.5° simplifies optical axis adjustment.
High stability with unique algorithm that prevents interference of external light.
Low-temperature Operation for Applications in Cold-storage Warehouses.
Orbital ABS T4Z Series Photoelectric Sensor For Industrial, T4Z-T10N
| Usage/Application |
Industrial
|
| Material |
ABS
|
| Model Name/Number |
T4Z-T10N
|
| Brand |
Orbital
|
| Operating Temperature |
-25 Deg C To 55 Deg C
|
| Voltage |
12~24V DC
|
| Weight |
Approx:120 g
|
| Sensing Distance |
8 m
|
| Response Time |
1.0 ms
|
| Light Source |
Infrared LED
|
| Degree of Protection |
IEC-IP67
|
Features:
- Mechanical axis and optical axis offset of less than ±2.5°simplifies optical axis adjustment.
- High stability with unique algorithm that prevents interference of external light.
- Low-temperature Operation for Applications in Cold-storage Warehouses.
| Type | T4Z-T10N | T4Z-R2N | T4Z-D10N | T4Z-D60N | ||
| Sensing distance | 8m | 2m | 180~250mm(100x100mm) | 450mm(300x300mm) | ||
| Standard sensing object | Opaque materals:12mm min. | Opaque materals:75mm min. | – | |||
| Differential travel | – | 20% max. of sensing distance | ||||
| Directional angle | 3~15° | 2~10° | – | |||
| Voltage | 12~24V DC pulse(P-P)±10% max. | |||||
| Current consumption | Emitter:15mA Receiver:20mA | 30mA max. | ||||
| Protection circuits | Reversed power supply polarity protection, Output short-circuit protection | Reversed power supply polarity protection, Output short-circuit protection, Mutual interference prevention, and Reversed output polarity protection | ||||
| Response time | 1.0ms max. | 2.0ms max. | 1.0ms max. | |||
| Control output | Load power supply voltage???26.4V DC max.; Load current???100mA max. (Load current with a residual voltage???1V max.) |
|||||
| Light source(wavelength) | Infrared LED | |||||
| Ambient illumination | Sunlight???10,000lx max.???Incandescent lamp???3,000lx max. | |||||
| Ambient temperature | Operating:-25~+55???, Storage:-40~+70??? (with no icing or condensation) | |||||
| Ambient humidity | Operating:35~85%RH, Storage:35~95%RH (with no condensation) | |||||
| Insulation resistance | 20MΩ min.(DC500V) | |||||
| Dielectric strength | AC1,000V 50/60Hz 1min | |||||
| Vibration resistance | 10~55Hz 1.5mm double amplitude for 2 hours each in X,Y and Z directions | |||||
| Shock resistance | Destruction | 500m/s2 3 times each X,Y and Z directions | ||||
| Degree of protection | IEC-IP67 | |||||
| Material | Case | PBT | ||||
| Sensing surface | Modified polyarylate | |||||
| Weight | Approx:120g | sApprox:65g | ||||
| Accessories | – | Reflector | ||||
| ITEM | Can be replacement of |
| T4Z-T10N | E3Z-T61 |
| T4Z-R2N | E3Z-R61 |
| T4Z-D10N | E3Z-D61 |
| T4Z-D60N | E3Z-D62 |
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